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Dr. S. Chandramohan

Ph.D.

Research Assistant Professor

Dr. Chandramohan joined SRM Institute of Science and Technology (formerly known as SRM University) in June 2016 as Research Assistant Professor of Physics and Nanotechnology. He received his PhD in Physics from Bharathiar University (India) in the year 2008. He started his research career as a postdoctoral fellow at Institute of Physics (India) in 2008. In 2009, he joined the Semiconductor Physics Research Center at Chonbuk National University (South Korea) as postdoctoral researcher and took up the position of Research Professor in the same discipline in 2012. He was awarded Korea Research Foundation (KRF) and Brain-Korea21 (BK21) fellowships.  His research interests are broadly in the development of multifunctional thin films and graphene for energy-efficient optoelectronic devices. 

Professional Positions 

  • Assistant Professor (since June 2016), Department of Physics & Nanotechnology, SRM Institute of Science and Technology (formerly known as SRM University), Kattankulathur, Tamil Nadu
  • Research Professor (September 2012- May 2016), Semiconductor Physics Research Center, Chonbuk National University, South Korea        
  • Postdoctoral Researcher (September 2009- August 2012), Semiconductor Physics Research Center, Chonbuk National University, South Korea
  • Postdoctoral Fellow (February 2008-August 2009), Institute of Physics, Bhubaneswar, India    

Awards and Achievements 

  • DST-SERB Core Research Grant (CRG) (2021-2024)
  • DST-SERB Startup Research Grant of ~ 35 Lakhs under Young Scientist Scheme (2016-2019)
  • Korea Research Foundation and Brain-Korea21 Fellowship, South Korea (2009&2014)
  • Two research papers published in Journal of Physics D: Applied Physics have been selected for Highlights in 2015 & 2012
  • Chemical Vapor Deposition of Graphene and fabrication of graphene/semiconductor opto-electronic devices
  • Growth and engineering of transition metal oxides and layered transition metal dichalcogenides (MoS2)
  • GaN-based light-emitting diodes
  • Research Highlights

2D Materials & Devices Laboratory

Leader

  • Dr. S. Chandramohan

Group Members

Ph.D. Pursuing

  • Mr. Santhosh D
  • Ms. Navanya Raveendran
  • Mr. Krishnamoorthy Ponnusamy
  • Ms. Preethu P Satheesh
  • Mr. Karthikeyan P

Facilities 

  • Hot-wall Chemical Vapor Deposition System (Model: planarGROW-2M, planarTECh, USA)
  • Horiba LABRAM HR Micro-Raman Spectrometer
  • Carry 5000 UV-VIS-NIR Spectrophotometer
  • Probe Station (PS-100, Lake Shore Cryotronics) equipped with Semiconductor Parameter Analyzer (KEITHLEY 4200S)
  1. Oxygen-driven growth regulation and defect passivation in chemical vapor deposited MoS2 monolayers, Santhosh Durairaj, P. Krishnamoorthy, Nitin Babu Shinde, Senthil Kumar Eswaran, Vijayshankar Asokan, Jong Bae Park, S. Chandramohan, Crystal Growth & Design (Under review)
  2. Morphology evolution of monolayer MoS2 crystals on SiO2 substrate at different growth temperature, P. Krishnamoorthy, Santhosh Durairaj, S. Chandramohan, Journal of Materials Science: Materials in Electronics (Under review).
  3. Growth Behavior, Nucleation Control and Excellent Optical Properties of Atomically Thin WS2 Thin Films Processed via Gas-phase Chemical Vapor Deposition, Nitin Babu Shinde, Beo Deul Ryu, Chang-Hee Hong, Bellarmine Francis, S. Chandramohan, Senthil Kumar Eswaran, Applied Surface Science (Under review).
  4. Observation of dopant-dependent efficiency in chemically doped graphene/silicon solar cells and prospects for MoOx to overcome the stability and efficiency limits, S. Chandramohan, Santhosh Durairaj, Tae Hoon Seo, Beo Deul Ryu, and Chang-Hee Hong, J. Appl. Phys.  129, 013101 (2021). This paper appeared as Editor’s Pick. [Impact factor: 2.546]  
  5. Large-scale Atomically Thin Monolayer 2H-MoS2 Field Effect Transistors, Nitin babu Shinde, Beo Deul Ryu, Kalaiarasan Meganathan, Bellarmine Francis, Chang-Hee Hong, S. Chandramohan, Senthil Kumar Eswaran, ACS Appl. Nano Mater. 3 (2020) 7371. [Impact factor: 5.097]  
  6. Barrier-assisted vapor phase CVD of large-area MoS2 monolayers with high spatial homogeneity, Santhosh Durairaj, P, Krishnamoorthy, Navanya Raveendran, Beo Deul Ryu, Chang-Hee Hong, Tae Hoon Seo and S. Chandramohan, Nanoscale Advances 2 (2020) 4106. [Impact factor: 4.553]  
  7. Rapid wafer-scale fabrication with layer-by-layer thickness control of atomically thin MoS2 films using gas-phase chemical vapor deposition, Nitin Babu ShindeBellarmine Francis M. S. Ramachandra RaoBeo Deul RyuS. Chandramohan, and  Senthil Kumar Eswaran, APL Materials 7 (2019) 08113. [Impact factor: 5.096]  
  8. Improved photovoltaic performance in graphene/silicon solar cell using MoO3/Ag/MoO3 multilayer coating, S. Chandramohan, V. Janardhanam, T. H. Seo, C.-H. Hong, and E.-K. Suh, Mater. Lett. 246, (2019) 103. [Impact factor: 3.423]  
  9. Boron nitride nanotube as a heat sinking and stress-relaxation layer for high-performance light emitting diode, T. H. Seo, G. H. Lee, A. H. Park, H. Cho, J. H. Min, S. Chandramohan, S.-R. Jeon, S. G. Jang, M. J. Kim and E.-K. Suh, Nanoscale 9 (2017) 16223. [Impact factor: 7.790]  
  10. A comparison of various surface charge transfer hole doping of graphene grown by chemical vapor deposition, S. Chandramohan, T. H. Seo, V. Janardhanam, C.-H. Hong and E.-K. Suh, Applied Surface Science 418 (2017) 258. [Impact factor: 6.707]
  11. The role of graphene formed on silver nanowire transparent conductive electrode in ultra-violet light emitting diodes, T. H. Seo, S. Lee, K. H. Min, S. Chandramohan, A. H. Park, G. H. Lee, M. Park, E.-K. Suh and M. J. Kim, Scientific Reports 6, Article No. 29464 (2016) [Impact factor: 4.379]
  12. Carbon-nanotubes-assisted nanoepitaxy of Si-doped GaN for improved performance of InGaN/GaN light-emitting diode, A. H. Park, S. Chandramohan*, T. H. Seo, G. H. Lee, K. H. Min, C.-H. Hong, M. J. Kim and E.-K. Suh, Nanotechnology 27, 275602 (2016) (accepted) [Impact factor: 3.874] * Equally contributed
  13. Tailored CVD graphene as a transparent and flexible gas barrier, T. H. Seo, S. Lee, H. Cho, S. Chandramohan, E.-K. Suh, H. S. Lee, S. Bae, S. M. Kim, M. Park, J. K. Lee, and M. J. Kim, Scientific Reports 6, Article No. 24143 (2016)  [Impact factor: 4.379]
  14. Efficient stress relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes, A. H. Park, T. H. Seo, S. Chandramohan, G. H. Lee, K. H. Min, S. Lee, M. J. Kim and E.-K. Suh, Nanoscale, 7 (2015) 15099 [Impact factor: 7.790]
  15. Hybrid electrode based on carbon nanotube and graphene for ultra-violet light emitting diodes, T. H. Seo, G. H. Lee, S. Park, S. Chandramohan, A. H. Park, H. Cho, M. J. Kim, and E.-K. Suh, Appl. Phys. Exp. 8 (2015) 102101 [Impact factor: 2.895]
  16. Insights into annealing-induced ohmic contact formation at graphene/p-GaN interface with a NiOx contact layer, S. Chandramohan, B. D. Ryu, T. H. Seo, H. Kim, E.-K. Suh, and C.-H. Hong, J. Phys. D: Appl. Phys. 48 (2015) 095102 [Impact factor:3.207]                                                                    This paper has been selected for Highlights in 2015.
  17. Improving the graphene electrode performance in ultra-violet light emitting diode using silver nanowire networks, T. H. Seo, A. H. Park, S. Park, S. Chandramohan, G. H. Lee, M. J. Kim, and E.-K. Suh, Optical Materials Express 5 (2015) 314-322 [Impact factor IF:3.442] 
  18. Fabrication and characteristics of GaN-based light emitting diodes with reduced graphene oxide current spreading layer, B. D. Ryu, M. Han, N. Han, Y. J. Park, K. B. Ko, J.-H. Yang, T. H. Lim, S. Chandramohan, T. V. Cuong, J. Cho, and C.-H. Hong, ACS Appl. Mater. Interfaces 6 (2014) 22451 [Impact factor:9.229] 
  19. Threading dislocation reduction in epitaxial GaN using v-groove patterned sapphire substrate with embedded silica nanospheres: N. Han, Y. J. Park, M. Han, B. D. Ryu, K. B. Ko, S. Chandramohan, C.-J. Choi, T. V. Cuong, and C.-H. Hong, Materials Letters 123 (2014) 97-100 [Impact factor:3.423]
  20. Performance evaluation of GaN light-emitting diodes using transferred graphene as current spreading layer: S. Chandramohan, K. B. Ko, J. H. Yang, B. D. Ryu, Y. S. Katharria, T. Y. Kim, B. J. Cho, and C.-H. Hong, J. Appl. Phys. 115 (2014) 054503 [Impact factor IF:2.546] 
  21. Stimulated N-doping and reduced graphene oxide on GaN under excimer laser reduction process, B. D. Ryu, N. Han, M. Han, S. Chandramohan, H. K. Kim, J. H. Kang, Y. J. Park, K. B. Ko, Y. T. Kim, J. H. Yang, J. B. Park, T. V. Cuong, and C.-H. Hong, Materials Letters 116 (2014) 412-15 [Impact factor:3.423]
  22. Air-ring microstructure arrays for enhanced light extraction from a face-up light-emitting diode: H. K. Kim, Y. J. Park, J. H. Kang, N. Han, M. Han, B. D. Ryu, K. B. Ko, J. H. Yang, Y. T. Kim, S. Chandramohan, H. Jeong, M. S. Jeong, and C.-H. Hong, Optics Letters 38 (2013) 1491-93 [Impact factor:3.776]
  23. Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern: N. Han, T. V. Cuong, M. Han, B. D. Ryu, S. Chandramohan*, J. B. Park, J. H. Kang, Y.-J. Park, K. B. Ko, H. Y. Kim, H. K. Kim, J. H. Ryu, Y. S. Katharria, C.-J. Choi and C.-H. Hong, Nature Communications 4, Article No 1452 (2013) [Impact factor:14.919] * Equally contributed
  24. Impact of interlayer processing conditions on the performance of GaN light-emitting diode with specific NiOx/graphene electrode: S. Chandramohan, J. H. Kang, B. D. Ryu, J. H. Yang, S. Kim, H. Kim, J. B. Park, T. Y. Kim, B. J. Cho, E.-K. Suh, and C.-H. Hong, ACS Appl. Mater. Interfaces 5 (2013) 958-964 [Impact factor:9.229]
  25. Rapid synthesis of sphere-like Cu2ZnSnS4 microparticles by microwave irradiation: R. Saravana Kumar, B. D. Ryu, S. Chandramohan, J. K. Seol, S.-K. Lee, and C.-H. Hong, Materials Letters 86 (2012) 174-177 [Impact factor:3.423]
  26. Chemically modified multilayer graphene with metal interlayer as an efficient current spreading electrode for InGaN/GaN blue light-emitting diodes: S. Chandramohan, J. H. Kang, Y.S. Katharria, N. Han, Y. S. Beak, K. B. Ko, J. B. Park, B. D. Ryu, H. K. Kim, E.-K. Suh, C.-H. Hong, J. Phys. D: Appl. Phys. 45 (2012) 145101 [Impact factor:3.207] This paper has been selected for Highlights in 2012
  27. Work-function-tuned multilayer graphene as current spreading electrode in blue light-emitting diodes: S. Chandramohan, J. H. Kang, Y.S. Katharria, N. Han, Y. S. Beak, K. B. Ko, J. B. Park, H. K. Kim, E.-K. Suh, and C.-H. Hong, Appl. Phys. Lett. 100 (2012) 023502 [Impact factor:3.791]
  28. Improving the optical performance of InGaN light-emitting diodes by altering light reflection and refraction with triangular air prism arrays: J. H. Kang, H. G. Kim, S. Chandramohan, H. K. Kim, H. Y.  Kim, J. H. Ryu, Y. J. Park, Y. S. Beak, J.-S. Lee, J. S. Park, Volodymyr V. Lysak, and C.-H. Hong, Optics Letters 37 (2012) 88-90 [Impact factor:3.776]
  29. Ion erosion induced nanostructured semiconductor surfaces: V. Venugopal, T. Basu, S. Garg, J. K. Tripathi, S. Chandramohan, P. Das, T. K. Chini, S. R. Bhattacharyya, D. Kanjilal, T. Som, Int. J. Nanotechnol. 9 (2012) 1007-16 [Impact factor:0.367]
  30. Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layers: Y. J. Park, J. H. Kang, H. Y. Kim, Volodymyr V. Lysak, S. Chandramohan, H. K. Kim, J. H. Ryu, N. Han, H. Jeong, M. S. Jeong, E.-K. Suh, and C.-H. Hong, Optics Express 19 (2011) 23429 [Impact factor:3.894]
  31. Enhanced light output power of GaN-based light-emitting diodes by nano-rough ITO film using ZnO nanoparticles: B. D. Ryu, P. Uthirakumar, J. H. Kang, B. J. Kwon, S. Chandramohan, H. K. Kim, H. Y. Kim, J. H. Ryu, H. G. Kim, and C.-H. Hong, J. Appl. Phys. 190 (2011) 093116 [Impact factor:2.546]
  32. Trap-state-assisted white light emission from a CdSe nanocrystal integrated hybrid light-emitting diode: S. Chandramohan, B. D. Ryu, H. K. Kim, C.-H. Hong, and E.-K. Suh, Optics Letters 36 (2011) 802-04 [Impact factor:3.776]
  33. Self-assembled periodic silica nanosphere arrays on wet-etched patterned sapphire substrate for a high light extraction efficiency light-emitting diode: N. Han, H.-G. Kim, H.-Y. Kim, J. H. Kang, B. D. Ryu, Y.-J. Park, M. Han, H. Jeong, S. Chandramohan, E.-K. Suh, C.-H. Hong, IEEE Electron Device Letters 32 (2011) 527-529 [Impact factor:4.187]
  34. Tuning the spectrometric properties of white light by surface plasmon effect using Ag nanoparticles in a color converting light-emitting diode: S. Chandramohan, B. D. Ryu, P. Uthirakumar, J. H. Kang, H. K. Kim, and C.-H. Hong, Solid-State Electronics 57 (2011) 90-92 [Impact factor:1.901]
  35. Fabrication and charge transfer characteristics of CdSe QDs sensitized vertically grown flowerlike ZnO arrays with CdS QDs co-sensitizers: P. Sudhagar, S. Chandramohan, R. Saravanakumar, Y.-G. Lee, R. Sathyamoorthy, C.-H. Hong, and Y. S. Kang, Physica status solidi (a) 208 (2011) 474-479 [Impact factor:1.981]
  36. Minimization of wafer bowing in GaN-based vertical light-emitting diodes by selective area growth using metal-organic chemical vapor deposition: J. H. Ryu, S. Chandramohan, H. Y. Kim, H. K. Kim, J. H. Kang, C.-H. Hong, H. K. Cho, H. D. Song, and H.-K. Kwon, Journal of Crystal Growth 314 (2011) 66-70 [Impact factor:1.797]
  37. Enhanced air-cavity effect of periodically oriented embedded air protrusions for high efficiency InGaN/GaN light emitting diodes: H. G. Kim, H. K. Kim, H. Y. Kim, H. Jeong, S. Chandramohan, P. Uthirakumar, M. S. Jeong, E.-K. Suh, and C.-H. Hong, Optics Letters 35 (2010) 3012-14 [Impact factor:3.776]
  38. Effect of ridge growth on wafer bowing and light extraction efficiency of vertical GaN-based light-emitting diodes: J. H. Ryu, S. Chandramohan, H. G. Kim, H. Y. Kim, H. K. Kim, N. Han, J.H. Kang, P. Uthirakumar, C. -H. Hong, H. K. Cho, H. D. Song, and H.-K. Kwon, Jpn. J. Appl. Phys. 49 (2010) [Impact factor:1.480]
  39. Effect of substrate temperature on implantation doping of Co in CdS nanocrystalline thin films: S. Chandramohan, A. Kanjilal, S.N. Sarangi, S. Majumder, R. Sathyamoorthy, C.-H. Hong, and T. Som, Nanoscale 2 (2010) 1155-1159 [Impact factor: 7.790]
  40. Influence of implantation induced Ni-doping on structural, optical, and morphological properties of nanocrystalline CdS thin films: S. Chandramohan, A. Kanjilal, T. Strache, J. K. Tripathi, S.N. Sarangi, R. Sathyamoorthy, and T. Som, Mater. Sci. Engg. B171 (2010) 16-19 [Impact factor: 4.051]
  41. Effect of Fe-ion implantation doping on structural and optical properties of CdS thin films: S. Chandramohan, A. Kanjilal, S.N. Sarangi, R. Sathyamoorthy, and T. Som, Appl. Phys. A 99 (2010) 837-842 [Impact factor: 2.584]
  42. Band gap engineering in PbS nanostructured thin films from near-infrared down to visible range by in situ Cd-doping: S. Thangavel, S. Ganesan, S. Chandramohan, P. Sudhagar, Y. S. Kang, and C.-H. Hong, J. Alloys and Compounds 495 (2010) 234-237 [Impact factor: 5.316]
  43. Implantation-assisted Co-doped CdS thin films: Structural, optical, and vibrational properties: S. Chandramohan, A. Kanjilal, S.N. Sarangi, S. Majumder, R. Sathyamoorthy, and T. Som, J. Appl. Phys. 106 (2009) 063506 [Impact factor:2.546]
  44. Modifications in structural and optical properties of Mn-ion implanted CdS thin films: S. Chandramohan, A. Kanjilal, T. Strache, J.K. Tripathi, S.N. Sarangi, R. Sathyamoorthy, and T. Som, Appl. Surf. Sci. 256 (2009) 465-468 [Impact factor:6.707]
  45. Structural and optical properties of Mn-doped CdS thin films prepared by ion implantation: S. Chandramohan, A. Kanjilal, J.K. Tripathi, S.N. Sarangi, R. Sathyamoorthy, and T. Som, J. Appl. Phys. 105 (2009) 123507 [Impact factor:2.546]
  46. Nanocrystalline CdSe thin films of different morphologies in thermal evaporation process: U. Pal, M. H. Zaldivar, R. Sathyamoorthy, V. Manjuladevi, P. Sudhagar, S. Chandramohan, and S. Senthilarasu, J. Nanosci. Nanotechnol. 8 (2008) 6474–6480 [Impact factor:1.354]
  47. Size effect on the physical properties of CdS thin films prepared by integrated physical-chemical approach: R. Sathyamoorthy, P. Sudhagar, S. Chandramohan, and U. Pal. J. Nanosci. Nanotechnol. 8 (2008) 6481–6486 [Impact factor:1.354]
  48. High-energy heavy-ion induced physical and surface-chemical modifications in polycrystalline cadmium sulfide thin films: S. Chandramohan, R. Sathyamoorthy, P. Sudhagar, D. Kanjilal, D. Kabiraj, K. Asokan, V. Ganesan, T. Shripathi, and U. P. Deshpande, Applied Physics A 94 (2009) 703-714 [Impact factor: 2.584]
  49. Synthesis of CdxMn1-xS nanoclusters by surfactant assisted method: Structural, optical and magnetic properties: P. Sudhagar, R. Sathyamoorthy, S. Chandramohan, S. Senthilarasu, and S.-H. Lee, Materials Letters 62 (2008) 2430–2433 [Impact factor:3.423]
  50. Influence of porous morphology on optical dispersion properties of template free mesoporous titanium dioxide (TiO2) films: P. Sudhagar, R. Sathyamoorthy, and S. Chandramohan, Applied Surface Science 254 (2008) 1919-1928 [Impact factor: 6.707]
  51. Optical properties of swift ion beam irradiated CdTe thin films: S. Chandramohan, R. Sathyamoorthy, P. Sudhagar, D. Kanjilal, D. Kabiraj, and K. Asokan, Thin Solid Films 516 (2008) 5508-5512 [Impact factor: 2.183]
  52. Effect of 80 MeV Oxygen ion beam irradiation on the properties of CdTe thin films: R. Sathyamoorthy S. Chandramohan, P. Sudhagar, D. Kanjilal, D. Kabiraj, K. Asokan and K. P. Vijayakumar, Journal of Materials Science 42 (2007) 6982-6988 [Impact factor: 4.220]
  53. Photoelectrical properties of titanium dioxide (TiO2) thin films: R. Sathyamoorthy, P. Sudhagar, S. Chandramohan, and K. P. Vijayakumar, Crystal Research and Technology 42 (2007) 498-503 [Impact factor: 1.639]
  54. Influence of SHI irradiation on the structure and surface topography of CdTe thin films on flexible substrate: S. Chandramohan, R. Sathyamoorthy, P. Sudhagar, D. Kanjilal, D. Kabiraj, K. Asokan, and V. Ganesan, Journal of Materials Science: Materials in Electronics 18 (2007) 1093-1098 [Impact factor: 2.478]
  55. Electrical conduction in zinc phosphide thin films: R. Sathyamoorthy, C. Sharmila, P. Sudhagar, S. Chandramohan, and S. Velumani, Materials Characterization 58 (2007) 730-734 [Impact factor: 4.342]
  56. Swift heavy ion beam irradiation induced modifications in structural, morphological and optical properties of CdS thin films: S. Chandramohan, R. Sathyamoorthy, P. Sudhagar, D. Kanjilal, D. Kabiraj, and K. Asokan, Nuclear Instruments and Methods in Physics Research B 254 (2007) 236-242 [Impact factor:1.377]
  57. Structural properties of CdTe thin films on different substrates: S. Chandramohan, R. Sathyamoorthy, S. Lalitha, and S. Senthilarasu, Solar Energy Materials & Solar Cells 90 (2006) 686-693 [Impact factor: 7.267]
  58. Structural and photoluminescence properties of swift heavy ion irradiated CdS thin films: R. Sathyamoorthy, S. Chandramohan, P. Sudhagar, D. Kanjilal, D. Kabiraj, and K. Asokan, Solar Energy Materials & Solar Cells 90 (2006) 2297-2304 [Impact factor: 7.267]

Bachelor of Technology Courses:

  • 2D Layered Nanomaterials
  • Carbon Nanotechnology
  • Micro and Nanoelectronics

Undergraduate Physics Courses:

  • Solar Technology
  • Atomic and Nuclear Physics

Opportunities: There are no vacancies for Ph.D. program at present.