RVK Mangalam Photo.jpg

Dr. R. Vengadesh Kumara Mangalam

Ph.D (JNCASR, Bangalore)

Research Assistant Professor


My research focuses on functional materials at microscopic, mesoscopic and macroscopic length scales. Functional materials have wide variety of physical phenomena that make them as the potential materials in many technological applications. Most of the functional oxide materials that I am working fall into the broad class of ferroic materials, i.e. ferroelectric / pyroelectric, magnetic and multiferroic materials.

My doctoral thesis research, at JNCASR, Bangalore, was on synthesis, structural characterization and physical properties of ferroic materials, such as BiAlO3, BiMnO3, nanocrystalline BaTiO3, and magnetic perovskites. My research involved synthesizing novel oxide materials, understanding their structure through precise structural refinement using Rietveld refinement method (using X-ray and neutron data) and correlating their properties with the material’s structure. In the post-doctoral positions at Laboratoire CRISMAT, France, and University of Illinois at Urbana-Champaign, United States, my research dealt with fabrication and characterization of functional oxide thin films. In Laboratoire CRISMAT, the research was focused on tuning film properties through epitaxial strain and by fabricating heterostructure. In UIUC, My research was mainly focused on finding high performance ferroelectric materials for thermal applications and the routes to enhance their properties.

Educational:

Ph.D. in Materials Science (2009)
Jawaharlal Nehru Centre for Advanced Scientific Research,
Bangalore, Karnataka, India

M.Sc. Chemistry (2004)
The American College (Affiliated to Madurai Kamaraj University),
Madurai, Tamil Nadu, India

B.Sc. Chemistry (2002)
The American College (Affiliated to Madurai Kamaraj University),
Madurai, Tamil Nadu, India


  • Complex oxides
  • Thin-film heterostructures
  • Ceramic materials
  • Composite materials
  • Nanomaterials
  • Ferroelectric / Pyroelectric materials
  • Magnetic materials
  • Multiferroic materials
  • Metallic oxides
  • Magnetoresistance materials and Materials processing for devices.

Details will be updated soon


Complete list is available in R. V. K. Mangalam’s Google Scholar Citation site

Recent Publications 

  •  J. C. Agar, A. R. Damodaran, M. B. Okatan, J. Kacher, C. Gammer, R. K. Vasudevan, S. Pandya, L. R. Dedon, R. V. K. Mangalam, G. A. Velarde, S. Jesse, N. Balke, A. M. Minor, S. V. Kalinin, and L. W. Martin, Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films, Nature Mater., 15, 549 (2016).
  • J. Magesh, P. Murugavel, R. V. K. Mangalam, K. Singh, Ch. Simon, and W. Prellier, Ferroelectric ordering and magnetoelectric effect of pristine and Ho-doped orthorhombic DyMnO3 by dielectric studies, J. Appl. Phys., 118, 074102 (2015).  
  • E. Bruyer, A. Sayede, A. Ferri, R. Desfeux, R. V. K. Mangalam, R. Ranjith, and W. Prellier, Insight on the ferroelectric properties in a (BiFeO3)2(SrTiO3)4 superlattice from experiment and ab initio calculations, Appl. Phys. Lett., 107, 042904 (2015).  
  • J. C. Agar, A. R. Damodaran, G. A. Velarde, S. Pandya, R. V. K. Mangalam, and L. W. Martin, Complex Evolution of Built-in Potential in Compositionally-Graded PbZr1-xTixO3 Thin Films, ACS Nano, 9, 7332-7342 (2015).  
  • A novel, layered phase in Ti-rich SrTiO3 epitaxial thin films, S. Lee, A. R. Damodaran, P. Gorai, N. Oh, J.  A. Moyer, J-H. Kwon, N. Ferdous, A. Shah, Z. Chen, E. Breckenfeld, R. V. K. Mangalam, P. V. Braun, P. Schiffer,  M. Shim, J-M.  Zuo, E. Ertekin, and L. W. Martin, Adv. Mater., 27, 861 (2015).
  • Reduction of the electrocaloric entropy change of ferroelectric PbZr1-xTixO3 epitaxial layers due to an elastocaloric effect, T. Tong, J. Karthik, R. V. K. Mangalam, L. W. Martin, and D. G. Cahill, Phys. Rev. B, 90, 094116 (2014).  
  • Tuning susceptibility via misfit strain in relaxed morphotropic phase boundary PbZr1-xTixO3 epitaxial thin films, J. C. Agar, R. V. K. Mangalam, A. R. Damodaran, G. Velarde, J. Karthik, M. B. Okatan, Z. H. Chen, S. Jesse, N. Balke, S. V. Kalinin, and L. W. Martin, Adv. Mater. Interfaces 1, 1400098 (2014).
  • Improved pyroelectric figures of merit in compositionally graded PbZr1-xTixO3 thin films, R. V. K. Mangalam, J. C. Agar, J. Karthik, A. Damodaran, and L. W. Martin, ACS Appl. Mater. Interfaces, 5, 13235 (2013).  
  • Role of rare earth on the Mn3+ spin reorientation in multiferroic Ho1-xLuxMnO3, J. Magesh, P. Murugavel, R. V. K. Mangalam, K. Singh, Ch. Simon, and W. Prellier, J. Appl. Phys., 114, 094102 (2013).  
  • Pyroelectric electron emission from nanometer-thick films of PbZr1-xTixO3, P. C. Fletcher, R. V. K. Mangalam, L. W. Martin, and W. P. King, Appl. Phys. Lett., 102, 192908 (2013).

 


 Courses Taught

·        18CYB101J  - Concepts in Chemistry 

·        15CY104      - Material Technology

·        15CY101      - Chemistry

Opening for Junior Research Fellow (JRF) position in DST-SERB sponsored project

Applications are invited from highly motivated and eligible candidates for the position of Junior Research Fellow (JRF) in a DST-SERB sponsored project entitled “Low Temperature Processable Ferroelectric Film based Flexible Pyroelectric Generator for Energy Harvesting

Essential Qualifications: M.Sc. in Physics/Chemistry/Materials Science/M.Tech in Materials/Electrical/Chemical engineering securing minimum first class marks or equivalent CGPA. CSIR UGC NET/GATE qualified candidates will be given preference. Experience in relevant research area/LabVIEW programming would also be preferred

Number of positions: One. Duration of the project: Three years.

Amount of fellowship: CSIR UGC NET/GATE qualified candidate: Rs. 25,000/-p.m. for initial two years. Based on the performance the JRF shall be promoted as SRF in the 3rd year and Rs. 28,000/-p.m. will be paid. Non-CSIR UGC NET/GATE candidate: Rs. 16,000/-p.m. for initial two years. Based on the performance the JRF shall be promoted as SRF in the 3rd year and Rs. 18,000/-p.m. will be paid. The JRF will also be entitled for getting 20% HRA (HRA admissible if the stay is outside the campus).

Age limit: Candidate should not be more than 28 years as on the last date of application. However upper age limit may be relaxed as per the existing rules.

Registration for Ph.D.: Selected candidate can be registered for the full time Ph.D. programme at SRM Institute of Science and Technology, Kattankulathur, Chennai after fulfilling minimum qualifications prescribed by the University

Interested candidates can send their application, cover letter together with their detailed Resume/CV, either by soft or hard copies on or before 15th October 2018 to the following address. Mark the subject as “JRF DST-SERB”

Dr. R. Vengadesh Kumara Mangalam, Research Assistant Professor, Research Institute & Department of Chemistry, R-33, 1309, 13th floor, University Building, SRM Institute of Science and Technology, Kattankulathur, Chennai – 603 203.

Emailvengadeshkumar.r@ktr.srmist.edu.in ; rvkm.academia@gmail.com

Shortlisted candidates will be intimated by e-mail informing date of interview.

 

Interested candidates can contact: 


Dr. R. Vengadesh Kumara Mangalam
Research Assistant Professor,
Research Institute & Department of Chemistry,
University Building - 1309/R-33,
SRM Institute of Science and Technology (formerly known as SRM University), Kattankulathur - 603203,
Chengalpattu District, Tamil Nadu, India
Email: vengadeshkumar.r@ktr.srmist.edu.in